OptiMOSTM Power-Transistor

文件：501.39 Kbytes Page：9 Pages

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：337.98 Kbytes Page：2 Pages

N 沟道功率 MOSFET

StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

isc N-Channel MOSFET Transistor

文件：338.56 Kbytes Page：2 Pages

20V-300V N-Channel Power MOSFET

OptiMOS?? Power-Transistor Features for sync. rectification, drives and dc/dc SMPS

文件：484.54 Kbytes Page：11 Pages

OptiMOS?? Power-Transistor Features for sync. rectification, drives and dc/dc SMPS

文件：484.54 Kbytes Page：11 Pages

StrongIRFET ™ 2 单 N 沟道功率 MOSFET 60 V，采用 TO-220 封装

Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 168A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 168A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0mW

文件：521.71 Kbytes Page：8 Pages

N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0m廓

文件：592.2 Kbytes Page：8 Pages