isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID = 168A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0 mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel PowerTrench® MOSFET 60V, 168A, 4.0mΩ

N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0m廓

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丝印代码：040N06N；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0mW

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OptiMOSTM Power-Transistor

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isc N-Channel MOSFET Transistor

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