iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=168A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

N-ChannelPowerTrench짰MOSFET60V,168A,4.0m廓

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Superiorthermalresistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=168A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

N-ChannelPowerTrench짰MOSFET60V,168A,4.0mW

文件：521.71 Kbytes Page：8 Pages