isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 168A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mod

MOSFET N-CH 60V 120A I2PAK

N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0mW

文件：521.71 Kbytes Page：8 Pages

丝印代码：040N06N；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

N-Channel PowerTrench짰 MOSFET 60V, 168A, 4.0m廓

文件：592.2 Kbytes Page：8 Pages

OptiMOSTM Power-Transistor

文件：501.39 Kbytes Page：9 Pages

isc N-Channel MOSFET Transistor

文件：337.98 Kbytes Page：2 Pages