位置：首页 > IC中文资料 > IPI200N25N3-G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI200N25N3-G | OptiMOS3 Power-Transistor 文件：719.12 Kbytes Page：11 Pages | Infineon 英飞凌 |   | |
N-Channel 250-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed | AnalogPower | | ||
OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Id | Infineon 英飞凌 | | ||
N-Channel MOSFET Transistor 文件：338.32 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
OptiMOS3 Power-Transistor 文件：719.12 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
OptiMOS3 Power-Transistor 文件：719.12 Kbytes Page：11 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
20+ |
TO-262 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
INFINEON/英飞凌 |
23+ |
TO-262 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INFINEON |
24+ |
PG-TO263-3D2-PAK(T |
8866 |
||||
INFINEON |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
23+ |
TO-262 |
8000 |
专注配单,只做原装进口现货 |
|||
INFINEON/英飞凌 |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON |
23+ |
PG-TO262-3 |
8000 |
只做原装现货 |
|||
INFINEON |
23+ |
PG-TO262-3 |
7000 |
||||
Infineon(英飞凌) |
24+ |
TO262 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
IPI200N25N3-G规格书下载地址
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2018-12-30
DdatasheetPDF页码索引
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