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位置：首页 > IC中文资料第1365页 > IPD1

IPD1价格

参考价格：￥4.9116

型号：IPD100N04S4-02 品牌：Infineon 备注：这里有IPD1多少钱，2025年最近7天走势，今日出价，今日竞价，IPD1批发/采购报价，IPD1行情走势销售排行榜，IPD1报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IPD1

CAT-EX-179-01 - Extraction Tool

DESCRIPTION Each tool handle is marked with the tooling number. Make sure it matches the tooling number specified in this document. The CC79 Mini Mate ® contact has a retaining lance that can be released through an access window located on the outside of the housing as shown in Figure 2. The Ext

Samtec

美国申泰

IPD100N04S4-02

isc N-Channel MOSFET Transistor

·FEATURES ·Drain Current –ID= 100A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) : 4mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fa

ISC

无锡固电

IPD100N04S4L-02

OptiMOS®-T2 Power-Transistor

Features • OptiMOSTM - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100 Avalanche tested

Infineon

英飞凌

IPD105N03LG

OptiMOS3 Power-Transistor

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Infineon

英飞凌

IPD10N03LA

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

Infineon

英飞凌

IPD10N03LA

OptiMOS2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

Infineon

英飞凌

IPD10N03LAG

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

Infineon

英飞凌

IPD11DP10NM

OptiMOS Power-Transistor,-100V

Features *P-channel *100 avalanche tested *normal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

Infineon

英飞凌

IPD122N10N3G

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

Infineon

英飞凌

IPD122N10N3G

OptiMOS™3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchron

Infineon

英飞凌

IPD12N03L

OptiMOS Buck converter series

Feature • N-Channel • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters

Infineon

英飞凌

IPD12N03LBG

OptiMOS짰2 Power-Transistor

OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

Infineon

英飞凌

IPD130N10NF2S

StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

Infineon

英飞凌

IPD135N03

30V N -Channel MOSFET

Features * Fast switching MOSFET for SMPS * Optimized technology for DC/DC converters * Excellent gate charge x Rps on) product (FOM) * Very low on-resistance Rpson) * Avalanche rated

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IPD135N03LG

30V N -Channel MOSFET

Features * Fast switching MOSFET for SMPS * Optimized technology for DC/DC converters * Excellent gate charge x Rps on) product (FOM) * Very low on-resistance Rpson) * Avalanche rated

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

IPD13N03LA

OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

Infineon

英飞凌

IPD13N03LA

OptiMOS 2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

Infineon

英飞凌

IPD13N03LA

OptiMOS짰2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

Infineon

英飞凌

IPD13N03LAG

OptiMOS짰2 Power-Transistor

13NO3LA -> Correct Partnumber : 13N03LA 1. Ideal for high-frequency dc/dc converters 2. Qualified according to JEDEC for target applications 3. N-channel, logic level 4. Excellent gate charge x RDS(on)product (FOM) 5. Superior thermal resistance 6. 175 °C operating temperature

Infineon

英飞凌

IPD14N03L

OptiMOS Buck converter series

Feature ● N-Channel ● Logic Level ● Low On-Resistance RDS(on) ● Excellent Gate Charge x RDS(on) product (FOM) ● Superior thermal resistance ● 175°C operating temperature ● Avalanche rated ● dv/dt rated ● Ideal for fast switching buck converter

Infineon

英飞凌

IPD14N06S2-80

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Bychip

百域芯

IPD16CN10NG

OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

Infineon

英飞凌

IPD16CN10N-G

OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

Infineon

英飞凌

IPD180N10N3G

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

Infineon

英飞凌

IPD18DP10LM

OptiMOS Power-Transistor,-100V

Features *P-channel *Very low on-resistance Rds(on) @ Vgs=4.5 V *100 avalanche tested *Logic level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

Infineon

英飞凌

IPD19DP10NM

OptiMOS Power-Transistor,-100V

Features *P-channel *100 avalanche tested *Normal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

Infineon

英飞凌

IPD100N04S4-02

OptiMOS-T2 Power-Transistor

文件：160.1 Kbytes Page：9 Pages

Infineon

英飞凌

IPD100N06S4-03

OptiMOS-T2 Power-Transistor

文件：168.75 Kbytes Page：9 Pages

Infineon

英飞凌

IPD1-02-D

.100 SHROUDED CONTACT BODY

文件：269.62 Kbytes Page：2 Pages

Samtec

美国申泰

IPD1-02-D-GP

包装：散装 描述：CONN RCPT HSG 4POS 2.54MM 连接器，互连器件 矩形连接器外壳

ETC

知名厂家

IPD1-02-D-GP-M

包装：散装 描述：CONN RCPT HSG 4POS 2.54MM 连接器，互连器件 矩形连接器外壳

ETC

知名厂家

IPD1-02-D-K

100 SHROUDED CONTACT BODY

文件：269.62 Kbytes Page：2 Pages

Samtec

美国申泰

IPD1-02-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-02-S

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-02-S-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-03-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-03-S-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-04-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-04-S-K

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-04-S-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-05-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD105N04LG

OptiMOS3 Power-Transistor

文件：236.24 Kbytes Page：9 Pages

Infineon

英飞凌

IPD1-05-S-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-06-D-K

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-06-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-06-S-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-08-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-08-S-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-10-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD110N12N3

N-Channel MOSFET Transistor

文件：336.12 Kbytes Page：2 Pages

ISC

无锡固电

IPD110N12N3G

OptiMOSTM3Power-Transistor

文件：329.42 Kbytes Page：10 Pages

Infineon

英飞凌

IPD110N12N3G

N-channel, normal level

文件：593.6 Kbytes Page：11 Pages

Infineon

英飞凌

IPD110N12N3G_15

N-channel, normal level

文件：593.6 Kbytes Page：11 Pages

Infineon

英飞凌

IPD1-10-S-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-12-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-12-S-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-15-D

100 SHROUDED CONTACT BODY

文件：269.62 Kbytes Page：2 Pages

Samtec

美国申泰

IPD1-15-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-15-S-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1-16-D-K-M

(2.54 mm) .100

文件：260.69 Kbytes Page：1 Pages

Samtec

美国申泰

IPD1产品属性

  • 类型

    描述

  • 型号

    IPD1

  • 功能描述

    MOSFET N-Channel 40V MOSFET

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

IPD1供应商更多...

更新时间：2025-8-15 20:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市天芯威科技有限公司
IPD180N10N3G
INFINEON
22+23+
DPAK
8000
新到现货，只做原装进口
询价
深圳市金芯世纪电子有限公司
IPD12CN10NG
INFINEON/英飞凌
22+
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
IPD18DP10LMATMA1
Infineon(英飞凌)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市科芯源微电子有限公司
IPD16CN10NG
INFINOEN
25+
TO252
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市煦洪科技有限公司
IPD12CN10NG
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源！
询价
深圳市科恒伟业电子有限公司
IPD13N03LAG
INFINEON/英飞凌
24+
TO-252
8540
只做原装正品现货或订货假一赔十!
询价
深圳市华睿芯科技有限公司
IPD180N10N
Infineon
24+
TO252
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市威雅利发展有限公司
IPD180N10N3G
INFINEON
15+
TO-252
1700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市弘扬芯城科技有限公司
IPD1-06-D
SAMTEC
2024+
Conn
500000
诚信服务,绝对原装原盘
询价
深圳市凌旭科技有限公司
IPD13N03LAG
INFINEON
2016+
TO252
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价

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IPD1规格书下载地址

IPD1参数引脚图相关

IPD1数据表相关新闻

DdatasheetPDF页码索引

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