位置：首页 > IC中文资料第3089页 > IPD10N03LAG
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD10N03LAG | OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 |   | |
N-Channel Enhancement Mode Power MOSFET Description The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
OptiMOS Buck converter series 文件：452.29 Kbytes Page：8 Pages | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.7366 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.83276 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N -C hannel E nhancem ent M ode Field E ffect Transistor 文件：655.67 Kbytes Page：6 Pages | ADV 爱德微 | |
IPD10N03LAG产品属性
- 类型
描述
- 型号
IPD10N03LAG
- 功能描述
MOSFET N-Channel MOSFET 20-200V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
TO-252 |
6523 |
房间原装进口现货假一赔十 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
8210 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON |
2012+ |
TO-252 |
12000 |
全新原装,绝对正品,公司现货供应。 |
|||
Infineon/英飞凌 |
20+ |
TO-252 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
ADI |
23+ |
TO-252 |
8000 |
只做原装现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-252D-PAK |
24190 |
原装正品代理渠道价格优势 |
|||
INFINEON/英飞凌 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
INFINEON |
24+ |
TO252-3 |
8866 |
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IPD10N03LAG规格书下载地址
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2018-12-30
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