位置：首页 > IC中文资料第3089页 > IPD10N03LA
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IPD10N03LA | OptiMOS2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 |   | |
IPD10N03LA | OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | |
IPD10N03LA | OptiMOS2 Power-Transistor | Infineon 英飞凌 | | |
OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
N-Channel Enhancement Mode Power MOSFET Description The G10N03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
OptiMOS Buck converter series 文件：452.29 Kbytes Page：8 Pages | Infineon 英飞凌 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.7366 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.83276 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N -C hannel E nhancem ent M ode Field E ffect Transistor 文件：655.67 Kbytes Page：6 Pages | ADV 爱德微 | |
IPD10N03LA产品属性
- 类型
描述
- 型号
IPD10N03LA
- 功能描述
MOSFET N-CH 25V 30A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
OptiMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
8210 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON |
24+ |
TO-252 |
5200 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
INFINEO |
21+ |
TO252 |
1523 |
公司现货,不止网上数量!原装正品,假一赔十! |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEO |
25+ |
TO-252 |
50 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Infineon Technologies |
21+ |
PG-TO252-3 |
2500 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
INFINEO |
25+ |
TO252 |
30000 |
代理全新原装现货,价格优势 |
|||
INFINEON |
20+ |
TO-263 |
15800 |
原装优势主营型号-可开原型号增税票 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON |
23+ |
NA |
1640 |
专做原装正品,假一罚百! |
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2018-12-30
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