| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 225 A at Tvj = 25°C • RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for | Infineon 英飞凌 |   | ||
CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 225 A at Tvj = 25°C • RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for | Infineon 英飞凌 | | ||
CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 127 A at Tvj = 25°C • RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage c | Infineon 英飞凌 | | ||
CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 98 A at Tvj = 25°C • RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 μs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca | Infineon 英飞凌 | | ||
SiC N-Channel MOSFET FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(on)= 19mΩ（TYP.）@VGS=18V Tj=25℃ ·Very low switching losses APPLICATIONS ·Solar power optimizer ·Online UPS/Industrial UP ·DC-DC Converters ·String inverters | ISC 无锡固电 | | ||
CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET Features • VDSS = 1200 V at Tvj = 25°C • IDCC = 55 A at Tvj = 25°C • RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage ca | Infineon 英飞凌 | | ||
SiC N-Channel MOSFET FEATURES ·Very low switching losses ·Wide gate-source voltage range ·Efficiency improvement APPLICATIONS ·Solar Inverters ·Industrial UPS ·Industrial SMPS ·Charger | ISC 无锡固电 | | ||
CoolSiC ™ 1200 V、14 mΩ SiC 沟槽 MOSFET，采用 TO247-3 封装 | Infineon 英飞凌 | | ||
CoolSiC ™ 1200 V、20 mΩ SiC 沟槽 MOSFET，采用 TO247-3 封装 | Infineon 英飞凌 | | ||
CoolSiC ™ 1200V SiC 沟槽MOSFET，采用TO247-3封装 | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.18024 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.38579 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.38579 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.1785 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.1791 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.17818 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.17912 Mbytes Page：17 Pages | Infineon 英飞凌 | | ||
CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET 文件：1.27261 Mbytes Page：17 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
INFINEON/英飞凌 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
INFINEON/英飞凌 |
21+ |
NA |
1773 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
Infineon(英飞凌) |
23+ |
PG-TO247-3 |
19850 |
原装正品,假一赔十 |
|||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
12700 |
买原装认准中赛美 |
|||
Infineon(英飞凌) |
24+ |
TO247 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
6820 |
只做原装,质量保证 |
|||
Infineon Technologies |
23+ |
SMD |
3652 |
原厂正品现货供应SIC全系列 |
|||
Infineon |
24+ |
PG-TO247-3 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
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原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
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2012-12-1
DdatasheetPDF页码索引
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