Features

• VDSS = 1200 V at Tvj = 25°C

• IDCC = 98 A at Tvj = 25°C

• RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C

• Very low switching losses

• Short circuit withstand time 3 μs

• Benchmark gate threshold voltage, VGS(th) = 4.2 V

• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied

• Robust body diode for hard commutation

• .XT interconnection technology for best-in-class thermal performance

Potential applications

• General purpose drives (GPD)

• EV-Charging

• Online UPS/Industrial UP

• String inverters

• Solar power optimizer

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

• Please also note the application note AN2019-05 for power and thermal cycling