位置:IMW120R040M1H > IMW120R040M1H详情

IMW120R040M1H中文资料

厂家型号

IMW120R040M1H

文件大小

1386.58Kbytes

页面数量

17

功能描述

CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

IMW120R040M1H数据手册规格书PDF详情

Features

• VDSS = 1200 V at Tvj = 25°C

• IDCC = 55 A at Tvj = 25°C

• RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C

• Very low switching losses

• Short circuit withstand time 3 µs

• Benchmark gate threshold voltage, VGS(th) = 4.2 V

• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied

• Robust body diode for hard commutation

• .XT interconnection technology for best-in-class thermal performance

Potential applications

• Industrial drives

• Industrial power supplies

• Solar inverters

Product validation

• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

• Please also note the application note AN2019-05 for power and thermal cycling

更新时间:2025-10-13 10:35:00
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