IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)= 2.05V@IC= 6A · Pb-free lead plating, RoHS compliant APPLICATIONS · Motor Controls · SMPS · Inverter

分立式IGBT

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

文件：371.12 Kbytes Page：14 Pages

IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

文件：658.38 Kbytes Page：13 Pages

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica

Power filed Effect Transistor

FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature

IGBT with integrated diode in packages offering space saving advantage

文件：1.92413 Mbytes Page：16 Pages

IGBT with integrated diode in packages offering space saving advantage

文件：1.74081 Mbytes Page：16 Pages

POWER FIELD EFFECT TRANSISTOR

文件：191.5 Kbytes Page：6 Pages