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IKB06N60T价格
参考价格：￥5.3208
型号：IKB06N60T 品牌：Infineon Technologies 备注：这里有IKB06N60T多少钱，2025年最近7天走势，今日出价，今日竞价，IKB06N60T批发/采购报价，IKB06N60T行情走势销售排行榜，IKB06N60T报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IKB06N60T | Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 文件：371.12 Kbytes Page：14 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
IKB06N60T | IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode 文件：658.38 Kbytes Page：13 Pages | Infineon 英飞凌 | | |
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica | Fuji 富士电机 | | ||
Power filed Effect Transistor FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature | JIANGSU 长电科技 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.92413 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.74081 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
IKB06N60T产品属性
- 类型
描述
- 型号
IKB06N60T
- 功能描述
IGBT 晶体管 LOW LOSS DuoPack 600V 6A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
NA |
32360 |
INFINEON/英飞凌全新特价IKB06N60TATMA1即刻询购立享优惠#长期有货 |
|||
Infineon/英飞凌 |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
Infineon/英飞凌 |
23+ |
PG-TO263-3 |
25630 |
原装正品 |
|||
Infineon/英飞凌 |
24+ |
PG-TO263-3 |
25000 |
原装正品,假一赔十! |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
INFINEON/英飞凌 |
23+ |
TO263 |
11220 |
英飞凌优势原装IC,高效BOM配单。 |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
210494 |
只做原厂渠道 可追溯货源 |
IKB06N60T规格书下载地址
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制造商零件编号 IHW30N160R2FKSA1 Manufacturer Or OEM Infineon Technologies 描述 IGBT 1600V 60A 312W TO247-3 说明 IGBT NPT，沟槽型场截止 1600V 60A 312W 通孔 PG-TO247-3 对无铅/(RoHS)规范的达标情况 无铅 / 符合限制有害物质指令(RoHS)规范要求 湿气敏感性等级（MSL） 1（无限） 最低订购数量 240 标准包装
2020-12-14
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