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位置：首页 > IC中文资料第890页 > HGTP7N60

型号 功能描述 生产厂家&企业 LOGO 操作
HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTP7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTP7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

TheHGTG7N60A4D,HGTP7N60A4DandHGT1S7N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTP7N60B3

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60B3S,HGT1S7N60B3SandHGTP7N60B3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevo

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTP7N60B3D

14A,600V,UFSSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiode

TheHGTP7N60B3DandHGT1S7N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTP7N60B3D

14A,600V,UFSSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiode

TheHGTP7N60B3DandHGT1S7N60B3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTP7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

Description TheHGTD7N60C3,HGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlowe

HARRIS

HARRIS corporation

HARRIS
HGTP7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTP7N60C3

14A,600V,UFSSeriesN-ChannelIGBTs

TheHGTD7N60C3SandHGTP7N60C3areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvar

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTP7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTP7N60C3DandHGT1S7N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
HGTP7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTP7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTP7N60A4

600V,SMPSSeriesN-ChannelIGBT

文件：191.58 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTP7N60A4D

600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

文件：189.45 Kbytes Page：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTP7N60A4D

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 34A 125W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
HGTP7N60A4-F102

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 34A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
HGTP7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

文件：547.54 Kbytes Page：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGTP7N60C3D_05

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

文件：547.54 Kbytes Page：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
7N60

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
7N60

iscN-ChannelMosfetTransistor

•DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
7N60

7Amps竊?00VoltsN-ChannelMOSFET

■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha

ESTEKEstek Electronics Co. Ltd

伊泰克电子北京伊泰克电子有限公司

ESTEK
7N60

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
7N60

7A600VN-channelEnhancementModePowerMOSFET

文件：898.89 Kbytes Page：11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体科技有限公司

WXDH

HGTP7N60产品属性

  • 类型

    描述

  • 型号

    HGTP7N60

  • 功能描述

    IGBT 晶体管 600V N-Channel IGBT SMPS Series

  • RoHS

    否

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

HGTP7N60供应商更多...

更新时间：2024-6-24 15:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市永贝尔科技有限公司
HGTP7N60C3D
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
深圳市昌和盛利电子有限公司
HGTP7N60C3D
FAIRCHILD
23+
TO-220
9526
询价
深圳市宏捷佳电子科技有限公司
HGTP7N60C3D
FSC
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
深圳市拓亿芯电子有限公司
HGTP7N60C3D
INTERSIL
23+
TO-220
30000
代理全新原装现货,价格优势
询价
深圳市纳艾斯科技有限公司
HGTP7N60C3DG7N60C3D
FAIRCHI
2020+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
深圳市星佑电子有限公司
HGTP7N60C3D
FAIRCHILD
05+
原厂原装
5226
只做全新原装真实现货供应
询价
深圳市博浩通科技有限公司
HGTP7N60C3D
FSC
23+
TO-220
6800
全新原装
询价
深圳市惊羽科技有限公司
HGTP7N60C3D
HARRIS
24+25+/26+27+
车规-晶体管
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳市亿顺芯科技有限公司
HGTU7N60C3
FAIRCHILD/仙童
2022+
252
57550
询价
深圳市宏世佳电子科技有限公司
HGTP7N60C3D
FAIRCHILDSEM
2023+
TO-220-3
3577
全新原厂原装产品、公司现货销售
询价

HGTP7N60芯片相关品牌

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HGTP7N60规格书下载地址

HGTP7N60参数引脚图相关

HGTP7N60数据表相关新闻

DdatasheetPDF页码索引

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