型号 功能描述 生产厂家 企业 LOGO 操作
HGTP7N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP7N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state

Intersil

HGTP7N60A4D

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件:189.45 Kbytes Page:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP7N60A4D

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 34A 125W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

Intersil

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

Intersil

600V, SMPS Series N-Channel IGBT

文件:191.58 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件:189.45 Kbytes Page:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTP7N60A4D产品属性

  • 类型

    描述

  • 型号

    HGTP7N60A4D

  • 功能描述

    IGBT 晶体管 600V N-Ch IGBT SMPS Series HF

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-10-7 9:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
24+
NA
27003
只做原装正品现货 欢迎来电查询15919825718
三年内
1983
只做原装正品
仙童
06+
TO-220
5000
原装库存
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
FAIRCHILD/仙童
24+
TO220
60000
全新原装现货
FAIRCHILD
NEW
TO-220
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
Fairchild/ON
23+
TO220AB
7000
FAIRCHILD
2023+
SMD
2400
安罗世纪电子只做原装正品货
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!

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