位置:首页 > IC中文资料第890页 > HGTP7N60A4D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state | Fairchild 仙童半导体 | ||
HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state | Intersil | ||
HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件:189.45 Kbytes Page:9 Pages | Fairchild 仙童半导体 | ||
HGTP7N60A4D | 封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 34A 125W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | ||
600V, SMPS Series N-Channel IGBT The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v | Fairchild 仙童半导体 | |||
600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower | Intersil | |||
600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower | Intersil | |||
600V, SMPS Series N-Channel IGBT 文件:191.58 Kbytes Page:8 Pages | Fairchild 仙童半导体 | |||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 文件:189.45 Kbytes Page:9 Pages | Fairchild 仙童半导体 |
HGTP7N60A4D产品属性
- 类型
描述
- 型号
HGTP7N60A4D
- 功能描述
IGBT 晶体管 600V N-Ch IGBT SMPS Series HF
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
13133 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD |
NEW |
TO-220 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FSC |
24+ |
NA |
27003 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
仙童 |
06+ |
TO-220 |
5000 |
原装库存 |
|||
FAIRCHIL |
24+ |
TO-220 |
8866 |
||||
fAIRCHILD |
23+ |
TO220 |
2535 |
原厂原装正品 |
|||
FAIRC |
23+ |
TO-220 |
7300 |
专注配单,只做原装进口现货 |
|||
Fairchild/ON |
23+ |
TO220AB |
7000 |
||||
fAIRCHILD |
11+ |
TO220 |
35 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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HGTP7N60A4D规格书下载地址
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