型号 功能描述 生产厂家&企业 LOGO 操作
7N60

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
7N60

iscN-ChannelMosfetTransistor

•DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent–ID=7A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirem

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
7N60

7Amps竊?00VoltsN-ChannelMOSFET

■Description TheET7N60N-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. ■Features ●RDS(ON)=1.20Ω@VGS=10V ●Lowgatecha

ESTEKEstek Electronics Co. Ltd

伊泰克电子北京伊泰克电子有限公司

ESTEK
7N60

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
7N60

N-ChannelPowerMOSFET

DESCRIPTION TheNell7N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof7A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof600V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplications.suchasswitchedmodepowersu

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

NELLSEMI
7N60

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC
7N60

N-CHANNELPOWERMOSFET

■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

ZSELEC
7N60

7Amps,600VoltsN-CHANNELMOSFET

FEATURE ●7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING
7N60

N-Channel650V(D-S)PowerMOSFET

文件:1.10604 Mbytes Page:10 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
7N60

N-CHANNELPOWERMOSFET

文件:2.48283 Mbytes Page:8 Pages

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
7N60

7A600VN-channelEnhancementModePowerMOSFET

文件:898.89 Kbytes Page:11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
7N60

7A600VN-channelEnhancementModePowerMOSFET

文件:898.89 Kbytes Page:11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
7N60

7A600VN-channelEnhancementModePowerMOSFET

文件:899.52 Kbytes Page:11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
7N60

7A600VN-channelEnhancementModePowerMOSFET

文件:898.85 Kbytes Page:11 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH
7N60

7.4A,600VN-CHANNELPOWERMOSFET

文件:193.88 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

600V,SMPSSeriesN-ChannelIGBT

TheHGT1S7N60A4S9A,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statev

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

600V,SMPSSeriesN-ChannelIGBT

TheHGTD7N60A4S,HGT1S7N60A4S,HGTG7N60A4andHGTP7N60A4areMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchlower

Intersil

Intersil Corporation

Intersil

7Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC7N60AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsandisdesignedtohaveminimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsu

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600VoltsN-CHANNELMOSFET

FEATURE ●7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

HiPerFASTIGBTLightspeedSeries

Features •Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB •HighfrequencyIGBT •Highcurrenthandlingcapability •HiPerFASTTMHDMOSTMprocess •MOSGateturn-on -drivesimplicity Applications •Uninterruptiblepowersupplies(UPS) •Switc

IXYS

IXYS Corporation

IXYS

7Amps,600VoltsN-CHANNELMOSFET

FEATURE ●7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600VoltsN-CHANNELMOSFET

FEATURE ●7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

CHONGQINGChongqing Pingwei Enterprise co.,Ltd

重庆平伟实业重庆平伟实业股份有限公司

CHONGQING

7.4Amps,600/650VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELPOWERMOSFET

■DESCRIPTION TheUTC7N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600VoltsN-CHANNELMOSFET

■DESCRIPTION TheUTC7N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC7N60ZisahighvoltagepowerMOSFETdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedinhighspeedswitchingapplicationsofswitc

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7.4A,600VN-CHANNELPOWERMOSFET

文件:193.88 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N-CHANNELENHANCEMENTMODEMOSFET

文件:349.51 Kbytes Page:9 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:280.9 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A600VN-channelenhancedfieldeffecttransistor

文件:1.06531 Mbytes Page:7 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

FastSwitchingSpeed

文件:65.53 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

7A,600VN-CHANNELPOWERMOSFET

文件:250.51 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:280.9 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A,600VN-CHANNELPOWERMOSFET

文件:250.51 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

600V,SMPSSeriesN-ChannelIGBT

文件:191.58 Kbytes Page:8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

7A,600VN-CHANNELPOWERMOSFET

文件:250.51 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A,600VN-CHANNELPOWERMOSFET

文件:250.51 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7A,600VN-CHANNELPOWERMOSFET

文件:250.51 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:280.9 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:280.9 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7Amps,600/650VoltsN-CHANNELPOWERMOSFET

文件:280.9 Kbytes Page:7 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

7N60产品属性

  • 类型

    描述

  • 型号

    7N60

  • 制造商

    ISC

  • 制造商全称

    Inchange Semiconductor Company Limited

  • 功能描述

    N-Channel Mosfet Transistor

更新时间:2025-5-12 14:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
士兰微
2023+
TO-220F
998043
原厂全新正品旗舰店优势现货
CJ
21+
13880
公司只售原装,支持实单
24+
8866
士兰微
22+
TO-220F
998034
原装正品现货,可开13点税
CJ
19+
2478
只做原装正品,卖元器件不赚钱交个朋友
DG东光微
23+
TO220F
15000
全新原装现货,价格优势
仙童
24+
TO-220
27500
原装正品,价格最低!
VBsemi
21+
TO220
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AAT
23+
11539
3500
全新原装现货
UTC/友顺
2022+
TO-220
7500
原厂代理 终端免费提供样品

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  • UTC
  • YEASHIN

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