14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state vo

14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 14A 60W TO220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT 600V 14A 60W TO220AB

14A, 600V, UFS Series N-Channel IGBTs

The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state vo