600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

600V, SMPS Series N-Channel IGBT

文件：191.58 Kbytes Page：8 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 34A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT，600V，SMPS

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：189.45 Kbytes Page：9 Pages

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 34A TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

600V, SMPS Series N-Channel IGBT

文件：191.58 Kbytes Page：8 Pages

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：189.45 Kbytes Page：9 Pages