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HGTP5N120价格
参考价格：￥4.9602
型号：HGTP5N120BND 品牌：FAIRCHILD 备注：这里有HGTP5N120多少钱，2025年最近7天走势，今日出价，今日竞价，HGTP5N120批发/采购报价，HGTP5N120行情走势销售排行榜，HGTP5N120报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP5N120 | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil |   | |
HGTP5N120 | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc | Fairchild 仙童半导体 | | |
21A, 1200V, NPT Series N-Channel IGBTs The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state co | Intersil | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc | Fairchild 仙童半导体 | | ||
25A, 1200V, NPT Series N-Channel IGBT The HGTP5N120CN and HGT1S5N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc | Intersil | | ||
25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil | | ||
1200V，NPT IGBT | ONSEMI 安森美半导体 | | ||
5A, 1200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capabilit | UTC 友顺 | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc | Fairchild 仙童半导体 | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc | Fairchild 仙童半导体 | |
HGTP5N120产品属性
- 类型
描述
- 型号
HGTP5N120
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
2100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
24+ |
TO220 |
6850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD/仙童 |
24+ |
TO220 |
880000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
19+ |
TO-220 |
12 |
||||
FAIRCHILD |
25+23+ |
TO220 |
12942 |
绝对原装正品全新进口深圳现货 |
|||
ON |
24+ |
SMD |
50 |
全新正品现货供应特价库存 |
|||
FSC |
25+ |
TO220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
Intersil |
24+ |
TO-220 |
8866 |
||||
ON |
24+ |
ON |
9000 |
只做原装正品 有挂有货 假一赔十 |
HGTP5N120芯片相关品牌
HGTP5N120规格书下载地址
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