The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058.

Features

• 25A, 1200V, TC = 25°C

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss

• Temperature Compensating SABER™ Model

    Thermal Impedance SPICE Model www.intersil.com

• Related Literature

    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”