HGTG5N120BND价格

参考价格:¥9.3139

型号:HGTG5N120BND 品牌:Fairchild 备注:这里有HGTG5N120BND多少钱,2025年最近7天走势,今日出价,今日竞价,HGTG5N120BND批发/采购报价,HGTG5N120BND行情走势销售排行榜,HGTG5N120BND报价。
型号 功能描述 生产厂家&企业 LOGO 操作
HGTG5N120BND

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG5N120BND

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

Intersil

HGTG5N120BND

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IGBT NPT 1200V 21A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

5A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capabilit

UTC

友顺

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

Intersil

HGTG5N120BND产品属性

  • 类型

    描述

  • 型号

    HGTG5N120BND

  • 功能描述

    IGBT 晶体管 21a 1200V IGBT NPT Series N-Ch

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-16 13:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
TO247
9600
原装现货,优势供应,支持实单!
FAIRCHILD/仙童
24+
TO-247
39197
郑重承诺只做原装进口现货
ON
24+
TO-247
5000
十年沉淀唯有原装
ON/安森美
2410+
TO-247
80000
原装正品.假一赔百.正规渠道.原厂追溯.
ON
24+
TO-247
9000
只做原装 假一赔十
ON/安森美
24+
TO-247
880000
明嘉莱只做原装正品现货
FSC
2018+
TO-3P
6528
承若只做进口原装正品假一赔十!
ON/安森美
21+
TO-247-3
8080
只做原装,质量保证
ON/安森美
24+
TO-247-3
30000
原装正品公司现货,假一赔十!
ON/安森美
24+
NA/
3370
原装现货,当天可交货,原型号开票

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