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HGTP5N120BND价格
参考价格：￥4.9602
型号：HGTP5N120BND 品牌：FAIRCHILD 备注：这里有HGTP5N120BND多少钱，2025年最近7天走势，今日出价，今日竞价，HGTP5N120BND批发/采购报价，HGTP5N120BND行情走势销售排行榜，HGTP5N120BND报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTP5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
HGTP5N120BND | 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil | | |
5A, 1200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capabilit | UTC 友顺 | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low | Intersil | | ||
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |
HGTP5N120BND产品属性
- 类型
描述
- 型号
HGTP5N120BND
- 功能描述
IGBT 晶体管 21a 1200V IGBT NPT Series N-Ch
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD/仙童 |
24+ |
NA/ |
2100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
24+ |
TO220 |
880000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
23+ |
TO-220-3 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
FAIRCHILD/仙童 |
21+ |
TO220 |
1709 |
||||
onsemi |
两年内 |
NA |
2 |
实单价格可谈 |
|||
FSC |
25+ |
TO220 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
24+ |
TO220 |
6850 |
只做原装正品现货或订货假一赔十! |
|||
ON/安森美 |
24+ |
TO-220 |
77600 |
只做原装，欢迎询价，量大价优 |
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