5A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capabilit

5A, 1200V N-CHANNEL POWER MOSFET

The UTC 5N120 provide excellent RDS(ON), low gate chargeand operation with low gate voltages. This device is suitable foruse as a load switch or in PWM applications. RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A Low Reverse Transfer Capacitance Fast Switching Capability Avalanche Energy Specified Improved dv/dt Capability, High Ruggedness;

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conducti • 21A, 1200V, TC = 25°C\n• 1200V Switching SOA Capability\n• Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150°C\n• Short Circuit Rating\n• Low Conduction Loss\n• Thermal Impedance SPICE Model\n   Temperature Compensating SABER™ Model\n   www.fairchildsemi.com\n• Related Literature;

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

5A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capabilit

5A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capabilit

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

Short Circuit Rated IGBT

General Description Fairchilds RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters w