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型号 功能描述 生产厂家&企业 LOGO 操作
5N120

5A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capabilit

UTC

友顺

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

Intersil

5A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capabilit

UTC

友顺

5A, 1200V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 5N120 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 3.1Ω @ VGS=10V, ID=2.5A * Low Reverse Transfer Capacitance * Fast Switching Capabilit

UTC

友顺

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

Intersil

更新时间:2025-8-15 9:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
TO-220
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
国产
24+
TO-252
30000
原装正品优势供应
FAIRCHILD
25+
TO-247
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
FAIRCHILD/仙童
22+
TO-247
18000
只做全新原装,支持BOM配单,假一罚十
ST
23+
TO-220
16900
正规渠道,只有原装!
RENESAS
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
HITACHI/日立
23+
TO-3P
36688
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS/瑞萨
25+
NA
880000
明嘉莱只做原装正品现货
70
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Littelfuse
23+
保险丝
5864
原装原标原盒 给价就出 全网最低

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