N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

N-Channel Power Field Effect Transistor

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

High Voltage MOSFET

High Voltage MOSFET

BIDD05N60T Insulated Gate Bipolar Transistor (IGBT)

Features 600V, 5A, Low VCE(sat) Trench-Gate Field-Stop technology Optimized for conduction Robust RoHS compliant* Applications Switch-Mode Power Supplies (SMPS) Uninterruptible Power Sources (UPS) Power Factor Correction (PFC)

N-Channel 650 V (D-S) MOSFET

文件：1.99607 Mbytes Page：9 Pages

N-Channel Power MOSFET

文件：823.62 Kbytes Page：4 Pages

N -Channel P ower MOSFET

文件：603.14 Kbytes Page：2 Pages

N-Channel Power MOSFET

文件：985.21 Kbytes Page：3 Pages