位置：首页 > IC中文资料第9645页 > H05N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H05N60 | N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl | HSMC 华昕 |   | |
H05N60 | N-Channel Power Field Effect Transistor | HSMC 华昕 | | |
N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl | HSMC 华昕 | | ||
High Voltage MOSFET | HSMC 华昕 | | ||
High Voltage MOSFET | HSMC 华昕 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protecti | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection | ONSEMI 安森美半导体 | | ||
POWERLUX IGBT This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection Zener Diode • Industry Standard Package (SOT223) • High Speed Eoff: Typic | MOTOROLA 摩托罗拉 | | ||
Insulated Gate Bipolar Transistor 文件：138.49 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | |
H05N60产品属性
- 类型
描述
- 型号
H05N60
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ANAM |
25+ |
DIP48 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
ANAM |
24+ |
DIP48 |
9 |
||||
GTS |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
|||
GTS |
2447 |
DIP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
GTS |
22+ |
DIP |
20000 |
只做原装 |
|||
金升阳 |
900 |
||||||
GTS |
9934+ |
DIP |
405 |
原装现货 |
|||
GTS |
02+ |
DIP10 |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA/东芝 |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
|||
GTS |
23+ |
DIP10 |
50000 |
全新原装正品现货,支持订货 |
H05N60规格书下载地址
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