位置：首页 > IC中文资料第9645页 > H05N60E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H05N60E | N-ChannelPowerFieldEffectTransistor Description ThisadvancedhighvoltageMOSFETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationssuchaspowersupl | HSMC 华昕 |  |   |
BIDD05N60TInsulatedGateBipolarTransistor(IGBT) Features 600V,5A,LowVCE(sat) Trench-GateField-Stoptechnology Optimizedforconduction Robust RoHScompliant* Applications Switch-ModePowerSupplies(SMPS) UninterruptiblePowerSources(UPS) PowerFactorCorrection(PFC) | BournsBourns Inc. 伯恩斯（邦士） |  | | |
N-Channel650V(D-S)MOSFET 文件：1.99607 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-ChannelPowerMOSFET 文件：823.62 Kbytes Page：4 Pages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | | |
N-ChannelPowerMOSFET 文件：603.14 Kbytes Page：2 Pages | ZPSEMI ZP Semiconductor |  | | |
N-ChannelPowerMOSFET 文件：985.21 Kbytes Page：3 Pages | ZPSEMI ZP Semiconductor | | |
H05N60E产品属性
- 类型
描述
- 型号
H05N60E
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MINATO |
24+25+/26+27+ |
车规-连接器- |
12680 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
GTS |
23+ |
DIP |
18000 |
||||
GTS |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
|||
H |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
|||
ARTESYN |
18+ |
MODULE |
2180 |
公司大量全新正品 随时可以发货 |
|||
H |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
H |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
|||
ANAM |
DIP48 |
9 |
|||||
华晰 |
21+ |
TO-220F |
70 |
原装现货假一赔十 |
|||
华晰 |
2048+ |
TO-220F |
9851 |
只做原装正品现货!或订货假一赔十! |
H05N60E芯片相关品牌
H05N60E规格书下载地址
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