位置：首页 > IC中文资料第9645页 > H05N60F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H05N60F | N-Channel Power Field Effect Transistor Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl | HSMC 华昕 |   | |
H05N60F | High Voltage MOSFET | HSMC 华昕 | | |
BIDD05N60T Insulated Gate Bipolar Transistor (IGBT) Features 600V, 5A, Low VCE(sat) Trench-Gate Field-Stop technology Optimized for conduction Robust RoHS compliant* Applications Switch-Mode Power Supplies (SMPS) Uninterruptible Power Sources (UPS) Power Factor Correction (PFC) | BOURNS 伯恩斯 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.99607 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel Power MOSFET 文件：823.62 Kbytes Page：4 Pages | JIANGSU 长电科技 | | ||
N -Channel P ower MOSFET 文件：603.14 Kbytes Page：2 Pages | ZPSEMIZP Semiconductor 至尚臻品 | | ||
N-Channel Power MOSFET 文件：985.21 Kbytes Page：3 Pages | ZPSEMIZP Semiconductor 至尚臻品 | |
H05N60F产品属性
- 类型
描述
- 型号
H05N60F
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GTS |
2016+ |
变压器 |
8850 |
只做原装,假一罚十,公司专营变压器,滤波器! |
|||
SOP-10 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
GTS |
23+ |
DIP |
3000 |
原装正品假一罚百!可开增票! |
|||
GTS |
25+ |
DIP |
18000 |
原厂直接发货进口原装 |
|||
ANAM |
25+ |
DIP48 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
ANAM |
23+ |
DIP48 |
7100 |
绝对全新原装!现货!特价!请放心订购! |
|||
ANAM |
24+ |
DIP48 |
9 |
||||
MINATO |
2450+ |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
||||
GTS |
2026+ |
DIP10 |
15238 |
原厂优势渠道 |
|||
GTS |
25+ |
DIP |
2650 |
原装优势!绝对公司现货 |
H05N60F规格书下载地址
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