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位置：首页 > IC中文资料 > H05N60F

型号 功能描述 生产厂家 企业 LOGO 操作
H05N60F

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

HSMC

华昕

H05N60F

High Voltage MOSFET

HSMC

华昕

H05N60

N-Channel Power Field Effect Transistor

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supl

HSMC

华昕

MGS05N60D

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protecti

MOTOROLA

摩托罗拉

MGS05N60D

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection

ONSEMI

安森美半导体

MMG05N60D

POWERLUX IGBT

This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. • Built–In Free Wheeling Diode • Built–In Gate Protection Zener Diode • Industry Standard Package (SOT223) • High Speed Eoff: Typic

MOTOROLA

摩托罗拉

MMG05N60D

Insulated Gate Bipolar Transistor

文件：138.49 Kbytes Page：6 Pages

ONSEMI

安森美半导体

H05N60F产品属性

  • 类型

    描述

  • Channel：

    N

  • VDSS(V)：

    600

  • ID(A)：

    5

  • VGS(V)：

    ±30

  • RDS(on)Max.(ohm)：

    2.3

  • RDS(on)@VGS(V)：

    10

  • RDS(on)@ID(A)：

    2.5

  • RoHS(Note1)：

    PF

  • Status(Note2)：

    M

H05N60F供应商更多...

更新时间：2026-8-1 8:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市柯尔基电子有限公司
H05N60F
HJ/华昕
26+
TO-220F
16790
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
询价
深圳市河锋鑫科技有限公司
H05N60FTK5A60
TOSHIBA/东芝
22+
TO-220F
6000
十年配单,只做原装
询价
深圳市宏捷佳电子科技有限公司
H05N60FTK5A60
TOSHIBA
25+
TO-TO-220F
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价

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