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H05N60F数据手册规格书PDF详情
Description
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.
Features
• Higher Current Rating
• Lower RDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified
H05N60F产品属性
- 类型
描述
- 型号
H05N60F
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
更新时间：2025-10-20 14:04:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
H |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
|||
HJ/华昕 |
23+24 |
TO-220F |
16790 |
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC |
|||
H |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ANAM |
24+ |
DIP48 |
9 |
||||
ANAM |
23+ |
DIP48 |
7100 |
绝对全新原装!现货!特价!请放心订购! |
|||
ANAM |
25+ |
DIP48 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
ANAM |
2023+环保现货 |
DIP48 |
1850 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
|||
MINATO |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
MINATO |
2450+ |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
||||
GTS |
25+ |
DIP |
18000 |
原厂直接发货进口原装 |
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H05N60F 芯片相关型号
HSMC相关芯片制造商
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