This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies.

• Built–In Free Wheeling Diode

• Built–In Gate Protection Zener Diode

• Industry Standard Package (SOT223)

• High Speed Eoff: Typical 6.5 μJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/μs

• Robust High Voltage Termination

• Robust Turn–Off SOA