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H05N60E中文资料
H05N60E数据手册规格书PDF详情
Description
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits.
Features
• Higher Current Rating
• Lower RDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified
H05N60E产品属性
- 类型
描述
- 型号
H05N60E
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HSMC |
25+ |
NA |
586 |
专做原装正品,假一罚百! |
|||
H |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
H05N60E 资料下载更多...
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HSMC相关芯片制造商
Datasheet数据表PDF页码索引
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