Glass Passivated Junction Plastic Rectifier

FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets environmental standard MIL-S-19500 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material c

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 50 to 1600 Volts Forward Current - 1.0 Ampere FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmenta

SINTERED GLASS PASSIVATED JUNCTION RECTIFIER

SINTERED GLASS PASSIVATED JUNCTION RECTIFIER FEATURES * GPRC (Glass Passivated Rectifier Chip) inside * Glass passivated cavity-free junction * Capable of meeting environmental standards of MIL-S-19500 * 1.0 Ampere operation at TA=75oC and 55oC with no thermal runaway * Typical

Glass Passivated Junction Rectifiers

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Capable of meeting environmental standards of MIL-S-19500 • 1.0 Ampere operation at TA = 75°C and 55°C with

Glass Passivated Junction Rectifier

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Glass Passivated Rectifiers

丝印代码：GP10NB37LZ；10 A - 410 V internally clamped IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

丝印代码：GP10NC60HD；600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

丝印代码：GP10NC60KD；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

丝印代码：GP10NC60S；10 A, 600 V fast IGBT

文件：1.27233 Mbytes Page：18 Pages

650V/10A Trench and Field Stop IGBT

Features:  650V 10A,VCE(sat)(typ.) = 1.8 V@10A  High ruggedness performance  10μs short circuit capability  Positive VCE (sat) temperature coefficient  High efficiency for motor control  Excellent current sharing in parallel operation  RoHS compliant Applications:  Home appliances

10 A - 410 V internally clamped IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. The built in collector-gate Zener exhibits a very precise active clamping while the gateemitter Zener supplies an ESD protection. Feat

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency a

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

N-Channel MOSFET

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件：387.24 Kbytes Page：13 Pages

N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH TM IGBT

N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT

文件：387.24 Kbytes Page：13 Pages

N-channel 10A - 600V - TO-220 Very fast PowerMESH TM IGBT

文件：272.72 Kbytes Page：13 Pages

N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT

文件：315.32 Kbytes Page：13 Pages

N-channel 600V - 10A - TO-220 - D2PAK - TO-220FP very fast PowerMESH IGBT

文件：410.77 Kbytes Page：17 Pages

N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT

文件：453.39 Kbytes Page：15 Pages

N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH TM IGBT

文件：599.36 Kbytes Page：17 Pages

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

文件：526.13 Kbytes Page：17 Pages

10 A, 600 V fast IGBT

文件：1.27233 Mbytes Page：18 Pages

包装：带盒（TB） 描述：DIODE GEN PURPOSE DO204AL 分立半导体产品 二极管 - 整流器 - 单

包装：卷带（TR） 描述：DIODE GEN PURPOSE DO204AL 分立半导体产品 二极管 - 整流器 - 单