丝印代码：GP10NC60KD；10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH IGBT

Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “K” identifies a family optimized for high frequency motor control applications wit

N-channel 600V - 10A - D2PAK / TO-220 / TO-220FP Short circuit rated PowerMESH TM IGBT

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N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH??IGBT

General features ■ LOWER ON-VOLTAGE DROP (Vcesat) ■ LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) ■ VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an a

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.