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GAL22V10D价格

参考价格：￥75.7917

型号：GAL22V10D-25LPI 品牌：Lattice Semi 备注：这里有GAL22V10D多少钱，2025年最近7天走势，今日出价，今日竞价，GAL22V10D批发/采购报价，GAL22V10D行情走势销售排行榜，GAL22V10D报价。

型号	功能描述	生产厂家企业	LOGO
GAL22V10D	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LP	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LP	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LPI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LPN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LS	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LS	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QP	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QP	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QPN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QPN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LJNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LP	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LP	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LPI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LPN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LS	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LS	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15QJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15QJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15QJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15QJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15QJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice

GAL22V10D产品属性

类型
描述
型号
GAL22V10D
功能描述
Electrically-Erasable PLD

GAL22V10D供应商更多...

更新时间：2025-12-30 12:55:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市富达微科技有限公司	GAL22V10D-15LD/883	LATTICE	24+	CDIP24	6000	原厂原装，价格优势，欢迎洽谈！	询价
深圳市凌旭科技有限公司	GAL22V10D-5LJ	LATTICE	2016+	PLCC28	4530	只做原装,假一罚十,公司可开17%增值税发票!	询价
中天科工半导体（深圳）有限公司	GAL22V10D-7LJ	LATTICE/莱迪斯	25+	PLCC28	32360	LATTICE/莱迪斯全新特价GAL22V10D-7LJ即刻询购立享优惠#长期有货	询价
深圳市得捷芯城科技有限公司	GAL22V10D-15LP	Lattice(莱迪斯)	24+	24-DIP(0.300	7848		询价
深圳市拓亿芯电子有限公司	GAL22V10D-25LJNI	LATTICE/莱迪斯	25+	PLCC	12500	全新原装现货,假一赔十	询价
深圳市高捷芯城科技有限公司	GAL22V10D-10LJI	Lattice(莱迪斯)	24+	标准封装	7818	原厂渠道供应,大量现货,原型号开票。	询价
深圳市赛尔通科技有限公司	GAL22V10D-15LD/883		23+		5000	原装现货本公司为一般纳税人,可开17%增值税票	询价
深圳市恒凯威科技开发有限公司	GAL22V10D-25LPN	LATTICE/莱迪斯	21+	DIP24	9080	只做原装,质量保证	询价
深圳市腾亿芯科技有限公司	GAL22V10D-25LJNI	LATTICE/莱迪斯	25+	PLCC	13800	原装,请咨询	询价
深圳市华斯顿科技有限公司	GAL22V10D-10LJN	LATTICE/莱迪斯	25+23+	PLCC28	13397	绝对原装正品全新进口深圳现货	询价

GAL22V10D芯片相关品牌

GAL22V10D规格书下载地址

GAL22V10D参数引脚图相关

GAL22V10D数据表相关新闻

GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
2020-4-24
GAL22V10D-10LPN，集成电路（IC）
全新原装，公司现货销售
2019-8-21
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
2019-5-20
GAL22V10D-15LPN原装现货特价销售集成电路（IC）
GAL22V10D-15LPN原装现货特价销售集成电路（IC）
2019-5-20
GAL20V8C-10LJ公司原装现货/随时可以发货
GAL20V8C-10LJ公司原装现货/随时可以发货
2019-4-16
GAL20V8C-5LJ公司原装现货/随时可以发货
GAL20V8C-5LJ公司原装现货/随时可以发货
2019-4-16

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GAL22V10D价格

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GAL22V10D数据表相关新闻

GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，

GAL22V10D-10LPN，集成电路（IC）

GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售

GAL22V10D-15LPN原装现货特价销售集成电路（IC）

GAL20V8C-10LJ公司原装现货/随时可以发货

GAL20V8C-5LJ公司原装现货/随时可以发货

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