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GAL22V10D价格

参考价格：￥75.7917

型号：GAL22V10D-25LPI 品牌：Lattice Semi 备注：这里有GAL22V10D多少钱，2025年最近7天走势，今日出价，今日竞价，GAL22V10D批发/采购报价，GAL22V10D行情走势销售排行榜，GAL22V10D报价。

型号	功能描述	生产厂家企业	LOGO
GAL22V10D	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LP	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LP	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LPI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LPN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LS	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LS	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QP	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QP	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QPN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QPN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LJNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LJNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LP	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LP	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LPI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LPN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LPNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15LS	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15LS	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15QJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15QJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15QJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-15QJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-15QJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice

GAL22V10D产品属性

类型
描述
型号
GAL22V10D
功能描述
Electrically-Erasable PLD

GAL22V10D供应商更多...

更新时间：2025-12-28 20:29:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华斯顿科技有限公司	GAL22V10D-10LJN	LATTICE/莱迪斯	25+23+	PLCC28	13397	绝对原装正品全新进口深圳现货	询价
瀚佳科技(深圳)有限公司	GAL22V10D-25LP	LATTICE	24+	DIP24	9860	一级代理/全新现货/长期供应!	询价
深圳市得捷芯城科技有限公司	GAL22V10D-15LP	Lattice(莱迪斯)	24+	24-DIP(0.300	7848		询价
深圳市高捷芯城科技有限公司	GAL22V10D-10LJI	Lattice(莱迪斯)	24+	标准封装	7818	原厂渠道供应,大量现货,原型号开票。	询价
深圳市恒凯威科技开发有限公司	GAL22V10D-25LPN	LATTICE/莱迪斯	21+	DIP24	9080	只做原装,质量保证	询价
深圳市坤融电子科技有限公司	GAL22V10D-25LPN	LATTICE/莱迪斯	2025+	DIP	4950	原装进口价格优请找坤融电子!	询价
深圳市鸿昌盛电子科技有限公司	GAL22V10D-10LJGAL22V10-PLCC	LATTICE	25+		57	公司原装现货常备库存!	询价
深圳市恒创达实业有限公司	GAL22V10D-15LPN	LATTICE	17+	DIP	6200	100%原装正品现货	询价
齐创科技(上海,北京,青岛)有限公司	GAL22V10D-25LPN	LATTICE	23+	DIP24	8000	原装正品,假一罚十	询价
君宇国际实业有限公司	GAL22V10D-10LD/883C	LATTICE		CDIP	45	原装现货，优势库存	询价

GAL22V10D芯片相关品牌

GAL22V10D规格书下载地址

GAL22V10D参数引脚图相关

GAL22V10D数据表相关新闻

GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
2020-4-24
GAL22V10D-10LPN，集成电路（IC）
全新原装，公司现货销售
2019-8-21
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
2019-5-20
GAL22V10D-15LPN原装现货特价销售集成电路（IC）
GAL22V10D-15LPN原装现货特价销售集成电路（IC）
2019-5-20
GAL20V8C-10LJ公司原装现货/随时可以发货
GAL20V8C-10LJ公司原装现货/随时可以发货
2019-4-16
GAL20V8C-5LJ公司原装现货/随时可以发货
GAL20V8C-5LJ公司原装现货/随时可以发货
2019-4-16

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GAL22V10D价格

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GAL22V10D芯片相关品牌

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GAL22V10D数据表相关新闻

GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，

GAL22V10D-10LPN，集成电路（IC）

GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售

GAL22V10D-15LPN原装现货特价销售集成电路（IC）

GAL20V8C-10LJ公司原装现货/随时可以发货

GAL20V8C-5LJ公司原装现货/随时可以发货

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