型号 功能描述 生产厂家 企业 LOGO 操作
GAL22V10D-15LJ

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL22V10D-15LJ

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL22V10D-15LJ

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL22V10D-15LJ

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-15LJ

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-15LJ

封装/外壳:28-LCC(J 形引线) 包装:散装 描述:IC CPLD 10MC 15NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

GAL22V10D-15LJ

All Devices Discontinued

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

High Performance E2CMOS PLD Generic Array Logic

Lattice

莱迪思

封装/外壳:28-LCC(J 形引线) 包装:管件 描述:IC CPLD 10MC 15NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-15LJ产品属性

  • 类型

    描述

  • 型号

    GAL22V10D-15LJ

  • 功能描述

    SPLD - 简单可编程逻辑器件 5V 22 I/O

  • RoHS

  • 制造商

    Texas Instruments

  • 逻辑系列

    TICPAL22V10Z

  • 大电池数量

    10

  • 最大工作频率

    66 MHz

  • 延迟时间

    25 ns

  • 工作电源电压

    4.75 V to 5.25 V

  • 电源电流

    100 uA

  • 最大工作温度

    + 75 C

  • 最小工作温度

    0 C

  • 安装风格

    Through Hole

  • 封装/箱体

    DIP-24

更新时间:2025-11-18 18:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LATTICE
24+
PLCC28
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
LATTICE
25+
113
公司优势库存 热卖中!
LATTICE
22+
PLCC28
5000
只做原装鄙视假货15118075546
Lattice Semiconductor Corporat
23+
28-LCC
11200
主营:汽车电子,停产物料,军工IC
LATTICE/莱迪斯
25+
PLCC28
54658
百分百原装现货 实单必成
LATTICE/莱迪斯
PLCC28
125000
一级代理原装正品,价格优势,长期供应!
LATTICE
2023+
PLCC28
50000
原装现货
LATTICE/莱迪斯
23+
28-PLCC11.51x11.51
98900
原厂原装正品现货!!
Lattice Semiconductor Corporat
21+
28-LCC(J 形引线)
370
100%进口原装!长期供应!绝对优势价格(诚信经营
LATTICE/莱迪斯
2223+
PLCC-28
26800
只做原装正品假一赔十为客户做到零风险

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