型号 功能描述 生产厂家 企业 LOGO 操作
GAL22V10D-10LJNI

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

LATTICE

莱迪思

GAL22V10D-10LJNI

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

LATTICE

莱迪思

GAL22V10D-10LJNI

封装/外壳:28-LCC(J 形引线) 包装:管件 描述:IC CPLD 10MC 10NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

GAL22V10D-10LJNI

IC CPLD 10MC 10NS 28PLCC

LATTICE

莱迪思

GAL22V10D-10LJNI

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

LATTICE

莱迪思

GAL22V10D-10LJNI

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

LATTICE

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

LATTICE

莱迪思

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

LATTICE

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

LATTICE

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

LATTICE

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

LATTICE

莱迪思

GAL22V10D-10LJNI产品属性

  • 类型

    描述

  • 型号

    GAL22V10D-10LJNI

  • 功能描述

    SPLD - 简单可编程逻辑器件 HI PERF E2CMOS PLD

  • RoHS

  • 制造商

    Texas Instruments

  • 逻辑系列

    TICPAL22V10Z

  • 大电池数量

    10

  • 最大工作频率

    66 MHz

  • 延迟时间

    25 ns

  • 工作电源电压

    4.75 V to 5.25 V

  • 电源电流

    100 uA

  • 最大工作温度

    + 75 C

  • 最小工作温度

    0 C

  • 安装风格

    Through Hole

  • 封装/箱体

    DIP-24

更新时间:2026-2-6 9:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
最新
2000
原装正品现货
LATTICE
2023+
PLCC
5800
进口原装,现货热卖
Lattice Semiconductor Corporat
24+
28-PLCC(11.51x11.51)
56200
一级代理/放心采购
Lattice
2318+
PLCC-28
4980
Lattice全系列进口原装特价
LATTICE/莱迪斯
24+
PLCC28
60000
全新原装现货
LATTICE
23+
PLCC
8560
受权代理!全新原装现货特价热卖!
LATTICE/莱迪斯
25+
PLCC28
98900
原厂原装正品现货!!
LATTICE
原厂封装
9800
原装进口公司现货假一赔百
Lattice Semiconductor Corporat
18500
全新原厂原装现货!受权代理!可送样可提供技术支持!
LATTICE
24+
PLCC
21580
原装现货

GAL22V10D-10LJNI芯片相关品牌

GAL22V10D-10LJNI数据表相关新闻