型号 功能描述 生产厂家 企业 LOGO 操作
GAL22V10D-10LJ

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL22V10D-10LJ

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

GAL22V10D-10LJ

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL22V10D-10LJ

IC CPLD 10MC 10NS 28PLCC

Lattice

莱迪思

GAL22V10D-10LJ

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-10LJ

封装/外壳:28-LCC(J 形引线) 包装:托盘 描述:IC CPLD 10MC 10NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

GAL22V10D-10LJ

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet.

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l

Lattice

莱迪思

GAL 22V10 Device Datasheet

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

封装/外壳:28-LCC(J 形引线) 包装:管件 描述:IC CPLD 10MC 10NS 28PLCC 集成电路(IC) CPLD(复杂可编程逻辑器件)

ETC

知名厂家

IC CPLD 10MC 10NS 28PLCC

Lattice

莱迪思

IC CPLD 10MC 10NS 28PLCC

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

All Devices Discontinued

文件:718.73 Kbytes Page:23 Pages

Lattice

莱迪思

GAL22V10D-10LJ产品属性

  • 类型

    描述

  • 型号

    GAL22V10D-10LJ

  • 功能描述

    SPLD - 简单可编程逻辑器件 5V 22 I/O

  • RoHS

  • 制造商

    Texas Instruments

  • 逻辑系列

    TICPAL22V10Z

  • 大电池数量

    10

  • 最大工作频率

    66 MHz

  • 延迟时间

    25 ns

  • 工作电源电压

    4.75 V to 5.25 V

  • 电源电流

    100 uA

  • 最大工作温度

    + 75 C

  • 最小工作温度

    0 C

  • 安装风格

    Through Hole

  • 封装/箱体

    DIP-24

更新时间:2025-9-26 8:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
LATTICE/莱迪斯
23+
PLCC28
98900
原厂原装正品现货!!
LATTICE
22+
PLCC
8000
原装正品支持实单
LATTICE/莱迪斯
2023+
PLCC28
6893
十五年行业诚信经营,专注全新正品
LATTICE/莱迪斯
2223+
PLCC28
26800
只做原装正品假一赔十为客户做到零风险
LATTICE
2016+
PLCC28
8000
只做原装,假一罚十,内存,闪存,公司可开17%增值税
lattice
17+
PLCC28
6200
100%原装正品现货
LATTICE
18+
PLCC28
85600
保证进口原装可开17%增值税发票
LATTICE
24+
PLCC
21580
原装现货
LATTICE/莱迪斯
25+
42
10000
全新原装现货库存
LatticeSemiconductorCorp
24+
28-PLCC(11.51x11.51)
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!

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