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GAL22V10价格

参考价格：￥75.7917

型号：GAL22V10D-25LPI 品牌：Lattice Semi 备注：这里有GAL22V10多少钱，2025年最近7天走势，今日出价，今日竞价，GAL22V10批发/采购报价，GAL22V10行情走势销售排行榜，GAL22V10报价。

型号	功能描述	生产厂家企业	LOGO
GAL22V10	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-10LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-10LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-15LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-15LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-15LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-15QJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-20LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-20LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-25LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-25LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-25LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-25LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-25QJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-25QP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-7LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-7LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10B-7LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10C-10LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10C-10LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10C-10LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10C-10LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10C-15LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10C-5LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10C-7LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10C-7LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10C-7LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LJNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LJNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LP	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LP	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LPI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LPI	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LPN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPNI	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LPNI	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10LS	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10LS	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QJ	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QJ	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJ	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QJN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QP	High Performance E2CMOS PLD Generic Array Logic Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QP	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QP	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice
GAL22V10D-10QPN	GAL 22V10 Device Datasheet Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les	Lattice 莱迪思	Lattice
GAL22V10D-10QPN	Product Change Notifications (PCNs) have been issued to discontinue all devices in this data sheet. Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much l	Lattice 莱迪思	Lattice

GAL22V10产品属性

类型
描述
型号
GAL22V10
制造商
LATTICE
功能描述
A246A14

GAL22V10供应商更多...

更新时间：2025-12-28 11:10:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	GAL22V10-10LP	LATTICE/莱迪斯	23+	DIP24	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市能元时代电子有限公司	GAL22V10-15LD	CY	23+	DIP	12800	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市一线半导体有限公司	GAL22V10	AMD	24+	PLCC	1902		询价
深圳市赛特兴科技有限公司	GAL22V10-15DQ	LINEAR/凌特	QQ咨询	DIP	104	全新原装研究所指定供货商	询价
深圳市宝芯创电子有限公司	GAL22V100-15LJ	LATTICE	18+	PLCC24	12500	全新原装正品,本司专业配单,大单小单都配	询价
深圳市金华微盛电子有限公司	GAL22V10B-10LP	LATTICE	19+	DIP	15876		询价
深圳市羿芯诚电子有限公司	GAL22V10D-25QJ	LATTICE	23+	PLCC	3220	原装正品公司现货价格优惠欢迎查询	询价
深圳市龙瀚电子有限公司	GAL22V10-25LP	GAL	11+	DIP	62000	原装正品现货优势18	询价
深圳市柯尔基电子有限公司	GAL22V10	LATTICE	23+24	DIP-	9680	原盒原标.进口原装.支持实单 .价格优势	询价
深圳市壹芯创科技有限公司	GAL22V100	LATTICE	22+	PLCC28	2000	进口原装!现货库存	询价

GAL22V10芯片相关品牌

GAL22V10规格书下载地址

GAL22V10参数引脚图相关

GAL22V10数据表相关新闻

GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，
2020-4-24
GAL22V10D-10LPN，集成电路（IC）
全新原装，公司现货销售
2019-8-21
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售
2019-5-20
GAL20V8B-25QJN公司原装现货/随时可以发货
GAL20V8B-25QJN公司原装现货/随时可以发货
2019-4-16
GAL20V8C-10LJ公司原装现货/随时可以发货
GAL20V8C-10LJ公司原装现货/随时可以发货
2019-4-16
GAL20V8C-5LJ公司原装现货/随时可以发货
GAL20V8C-5LJ公司原装现货/随时可以发货
2019-4-16

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GAL22V10价格

GAL22V10产品属性

GAL22V10供应商更多...

GAL22V10芯片相关品牌

GAL22V10规格书下载地址

GAL22V10参数引脚图相关

GAL22V10数据表相关新闻

GAL22V10B-20LD/883，GAL22V10B-25LJI，GAL22V10C-10LP，

GAL22V10D-10LPN，集成电路（IC）

GAL22V10D-15LJN简单可编程逻辑器件全新原装现货特价销售

GAL20V8B-25QJN公司原装现货/随时可以发货

GAL20V8C-10LJ公司原装现货/随时可以发货

GAL20V8C-5LJ公司原装现货/随时可以发货

DdatasheetPDF页码索引