High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

High Performance E2CMOS PLD Generic Array Logic

Description The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much les

High Performance E2 PLD

Description The ATF22V10C is a high performance CMOS (Electrically Erasable) Programmable Logic Device (PLD) which utilizes Atmel’s proven electrically erasable Flash memory technology. Speeds down to 5 ns and power dissipation as low as 100 µA are offered. All speed ranges are specified over t

Highperformance EE PLD

Description The ATF22V10C is a high-performance CMOS (electrically erasable) programmable logic device (PLD) that utilizes Atmel’s proven electrically erasable Flash memory technology. Speeds down to 5 ns and power dissipation as low as 100 µA are offered. All speed ranges are specified over th

Highperformance EE PLD

Description The ATF22V10C is a high-performance CMOS (electrically erasable) programmable logic device (PLD) that utilizes Atmel’s proven electrically erasable Flash memory technology. Speeds down to 5 ns and power dissipation as low as 100 µA are offered. All speed ranges are specified over th

Highperformance EE PLD

文件：408.7 Kbytes Page：22 Pages

Highperformance EE PLD

文件：408.7 Kbytes Page：22 Pages