FZ1200价格

参考价格:¥5262.9337

型号:FZ1200R12KF4 品牌:Infineon 备注:这里有FZ1200多少钱,2025年最近7天走势,今日出价,今日竞价,FZ1200批发/采购报价,FZ1200行情走势销售排行榜,FZ1200报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FZ1200

Surface Mount Zener Diodes

文件:204.68 Kbytes Page:5 Pages

Good-Ark

固锝电子

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Transistor

IGBT Power Module

eupec

IGBT-Wechselrichter / IGBT-inverter

IGBT-inverter

eupec

Hochstzulassige Werte / Maximum rated values

IGBT-Modules

eupec

Hochstzulassige Werte / Maximum rated values

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

eupec

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Hochstzulassige Werte / Maximum rated values

IGBT-Modules

eupec

IGBT-Wechselrichter / IGBT-inverter

IGBT-inverter

eupec

SCALE-2 Plug-and-Play Drivers

Features  Plug-and-play solution  Allows parallel connection of IGBT modules  For 2-level, 3-level and multilevel topologies  Built-in isolated DC/DC power supply (master)  Fiber-optic links (master)  Built-in interface to 1SP0635D2S1(C) (slave)  Duty cycle 0...100  Dynamic Advance

POWERINTPower Integrations, Inc.

荷兰帕沃英蒂格盛有限公司

Hochstzulassige Werte / Maximum rated values

IGBT-Modules

eupec

IGBT-modules

IGBT-modules

eupec

IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode

Electrical Features • High DC stability • High dynamic robustness • High short-circuit capability • Low VCEsat • Trench IGBT 3 • VCEsat with positive temperature coefficient Mechanical Features •AlSiC base plate for increased thermal cycling capability • Package with CTI > 600 • IHM B

Infineon

英飞凌

IHM-B module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High short-circuit capability - High dynamic robustness - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient Mechanical features - AlSiC base plate for increased

Infineon

英飞凌

IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

Features • Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High short-circuit capability - High dynamic robustness - Low VCE,sat - Trench IGBT 4 - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for incre

Infineon

英飞凌

IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

Features • Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High short-circuit capability - High dynamic robustness - Low VCE,sat - Trench IGBT 4 - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for incre

Infineon

英飞凌

Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features • Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High dynamic robustness - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient - High short-circuit capability • Mechanical features - High creepage and clearanc

Infineon

英飞凌

IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode

文件:609.09 Kbytes Page:9 Pages

Infineon

英飞凌

IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und bereits aufgetragenem Thermal Interface Material

文件:584.89 Kbytes Page:9 Pages

Infineon

英飞凌

IGBT模块

Infineon

英飞凌

封装/外壳:模块 包装:散装 描述:IGBT MODULE 1200V 1825A 分立半导体产品 晶体管 - IGBT - 模块

Infineon

英飞凌

IGBT模块

Infineon

英飞凌

IHM-B module with soft-switching Trench-IGBT4

文件:1.04152 Mbytes Page:9 Pages

Infineon

英飞凌

封装/外壳:模块 包装:散装 描述:IGBT MOD 1200V 1790A 7150W 分立半导体产品 晶体管 - IGBT - 模块

Infineon

英飞凌

Hochstzulassige Werte / maximum rated values

Infineon

英飞凌

Hochstzulassige Werte / maximum rated values

文件:205.18 Kbytes Page:9 Pages

eupec

IGBT High-Power Module

文件:365.7 Kbytes Page:4 Pages

eupec

IGBT High-Power Module

文件:365.7 Kbytes Page:4 Pages

eupec

IGBT-Modul

文件:585.96 Kbytes Page:9 Pages

Infineon

英飞凌

IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und bereits aufgetragenem Thermal Interface Material

文件:554.41 Kbytes Page:9 Pages

Infineon

英飞凌

IHM-B module with soft-switching Trench IGBT4

文件:499.55 Kbytes Page:9 Pages

Infineon

英飞凌

IHM-B module with soft-switching Trench-IGBT4

文件:492.74 Kbytes Page:9 Pages

Infineon

英飞凌

IGBT-Wechselrichter / IGBT-inverter

文件:284.15 Kbytes Page:8 Pages

eupec

IGBT-modules

文件:267.88 Kbytes Page:8 Pages

eupec

IGBT High-Power Module

文件:365.7 Kbytes Page:4 Pages

eupec

IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter Controlled3 diode

文件:470.77 Kbytes Page:9 Pages

Infineon

英飞凌

IGBT High-Power Module

文件:365.7 Kbytes Page:4 Pages

eupec

IGBT-Wechselrichter / IGBT-inverter

文件:275.79 Kbytes Page:8 Pages

eupec

LONG FRAME (1/4) TELEPHONE JACK PANELS

LONG FRAME (1/4) TELEPHONE JACK PANELS

SWITCH

Appliance inlet for low voltage, Snap-in Mounting, Front Side, Solder or Quick-connect Terminal

文件:317.34 Kbytes Page:3 Pages

SCHURTER

硕特

Ball Caster - 3/4 Metal Ball

文件:141.79 Kbytes Page:2 Pages

Adafruit

Original Strain Relief Bushings

文件:91.01 Kbytes Page:1 Pages

Heyco

CABLE, HIGH-FREQUENCY AND CONTROLLED ELECTRICAL

文件:195.79 Kbytes Page:39 Pages

TEC

泰科电子

FZ1200产品属性

  • 类型

    描述

  • 型号

    FZ1200

  • 功能描述

    IGBT 模块 IGBT 1200V 1200A

  • RoHS

  • 制造商

    Infineon Technologies

  • 产品

    IGBT Silicon Modules

  • 配置

    Dual 集电极—发射极最大电压

  • VCEO

    600 V

  • 集电极—射极饱和电压

    1.95 V 在25

  • C的连续集电极电流

    230 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    445 W

  • 最大工作温度

    + 125 C

  • 封装/箱体

    34MM

更新时间:2025-12-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
24+
A-IHV190-3
907
原厂订货渠道,支持BOM配单一站式服务
Infineon/英飞凌
24+
AG-IHMB130-2
6000
全新原装深圳仓库现货有单必成
Infineon/英飞凌
24+
Module
1262
原厂原装正品现货,代理渠道,支持订货!!!
INFINEON
MODULE
50000
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
模块
10520
一级代理原装正品现货,支持实单!
INFINEON原现
25+
MODULE
25000
全新原装现货,假一赔十
Infineon/英飞凌
23+
AG-IHMB130-2
12700
买原装认准中赛美
EUPEC
07+特价模块
1200A3300V
77
全新进口原装绝对公司现货特价!
Infineon/英飞凌
24+
AG-IHMB130-2
30000
原装正品公司现货,假一赔十!

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