IHM-B module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High short-circuit capability - High dynamic robustness - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient Mechanical features - AlSiC base plate for increased