IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode

Electrical Features • High DC stability • High dynamic robustness • High short-circuit capability • Low VCEsat • Trench IGBT 3 • VCEsat with positive temperature coefficient Mechanical Features •AlSiC base plate for increased thermal cycling capability • Package with CTI > 600 • IHM B

IHM-B module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

Features Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High short-circuit capability - High dynamic robustness - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient Mechanical features - AlSiC base plate for increased

封装/外壳：模块 包装：托盘 描述：IGBT MODULE 4500V 1200A 分立半导体产品 晶体管 - IGBT - 模块

封装/外壳：模块 包装：散装 描述：IHV IHM T XHP 3 3-6 5K AG-IHVB19 分立半导体产品 晶体管 - IGBT - 模块