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FX50价格
参考价格：￥0.0000
型号：FX500-LAC-GNJ-BB-JF 品牌：Vectron 备注：这里有FX50多少钱，2025年最近7天走势，今日出价，今日竞价，FX50批发/采购报价，FX50行情走势销售排行榜，FX50报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Current Switching Applications Features • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package. • Matched pair characteristics. | SANYO 三洋 |   | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. • The FX502 houses two chips, each being equivalent to the 2SD1805, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX503 houses two chips, each being equivalent to the 2SB1202, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. • The FX504 houses two chips, each being equivalent to the 2SD1802, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX505 houses two chips, each being equivalent to the 2SB1203, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. • The FX506 houses two chips, each being equivalent to the 2SD1803, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications Features • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. • The FX507 houses two chips, each being equivalent to the 2SC3647, in one package. • Matched pair characteristics. Applications • LCD baklight drive. | SANYO 三洋 | | ||
High-Current Switching Applications Features • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. • The FX508 houses two chips, each being equivalent to the 2SD1815, in one package. • Matched pair characteristics. Applications • LCD backlight drive. | SANYO 三洋 | | ||
High-Current Switching Applications Features • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. • The FX509 houses two chips, each being equivalent to the 2SB1215, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diod | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diod | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 35 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 35 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ............................................. 18.9mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ............................................. 18.9mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. | Mitsubishi 三菱电机 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: –100 V • rDS(ON) (max): 50 mΩ • ID: –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 50mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: –100 V • rDS(ON) (max): 50 mΩ • ID: –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode (TYP.) ...........55ns | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode (TYP.) ...........55ns | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 35 mΩ • ID : – 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 35 mΩ • ID : – 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ............................................. 18.9mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ............................................. 18.9mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 50mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode | Mitsubishi 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 50mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 50 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 50 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Current Switching Applications | ONSEMI 安森美半导体 | | ||
QTC Tone Encoder | CMLMICRO | | ||
QTC TONE ENCODER 文件：205.99 Kbytes Page：4 Pages | CMLMICRO | | ||
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO | | ||
A 17-TONE GENERATOR | CMLMICRO | | ||
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO | | ||
SMALL PHYSICAL SIZE 文件：144.91 Kbytes Page：3 Pages | CMLMICRO | | ||
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO | | ||
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO | | ||
FUNCTIONAL SCHEMATIC 文件：232.63 Kbytes Page：6 Pages | CMLMICRO | | ||
FUNCTIONAL SCHEMATIC 文件：232.63 Kbytes Page：6 Pages | CMLMICRO | | ||
5-TONE SEQUENTIAL COODE 文件：686.32 Kbytes Page：12 Pages | CMLMICRO | | ||
5-TONE SEQUENTIAL COODE 文件：686.32 Kbytes Page：12 Pages | CMLMICRO | |
FX50产品属性
- 类型
描述
- 型号
FX50
- 制造商
EDSYN
- 功能描述
FUMINATOR Tip Extraction Unit for 50 Soldering Stations ** LIMITED TO STO
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SANYO/三洋 |
2450+ |
SOT89-6 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
CML |
24+ |
CDIP |
9630 |
我们只做原装正品现货!量大价优! |
|||
N/A |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
SANYO |
23+ |
XP6 |
750 |
专营高频管模块,全新原装! |
|||
SANYO |
24+ |
SOT-89-6 |
6400 |
新进库存/原装 |
|||
CML-IT |
QQ咨询 |
CDIP |
106 |
全新原装 研究所指定供货商 |
|||
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
SANYO/三洋 |
25+ |
XP6 |
1000 |
原装正品,假一罚十! |
FX50规格书下载地址
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