FX50价格
参考价格：￥0.0000
型号：FX500-LAC-GNJ-BB-JF 品牌：Vectron 备注：这里有FX50多少钱，2026年最近7天走势，今日出价，今日竞价，FX50批发/采购报价，FX50行情走势销售排行榜，FX50报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Current Switching Applications Features • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package. • Matched pair characteristics. | SANYO 三洋 |   | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. • The FX502 houses two chips, each being equivalent to the 2SD1805, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX503 houses two chips, each being equivalent to the 2SB1202, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2 NPN transistors contained in one package, facilitating high-density mounting. • The FX504 houses two chips, each being equivalent to the 2SD1802, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX505 houses two chips, each being equivalent to the 2SB1203, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications High-Current Switching Applications Features • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. • The FX506 houses two chips, each being equivalent to the 2SD1803, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
High-Current Switching Applications Features • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. • The FX507 houses two chips, each being equivalent to the 2SC3647, in one package. • Matched pair characteristics. Applications • LCD baklight drive. | SANYO 三洋 | | ||
High-Current Switching Applications Features • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. • The FX508 houses two chips, each being equivalent to the 2SD1815, in one package. • Matched pair characteristics. Applications • LCD backlight drive. | SANYO 三洋 | | ||
High-Current Switching Applications Features • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. • The FX509 houses two chips, each being equivalent to the 2SB1215, in one package. • Matched pair characteristics. | SANYO 三洋 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –30V • rDS (ON) (MAX) 35mΩ • ID –50A • Integrated Fast Recovery Diod | MITSUBISHI 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –30V • rDS (ON) (MAX) 35mΩ • ID –50A • Integrated Fast Recovery Diod | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 35 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 35 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –60V • rDS (ON) (MAX) 18.9mΩ • ID –50A • Integrated Fast Recovery Diode | MITSUBISHI 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –60V • rDS (ON) (MAX) 18.9mΩ • ID –50A • Integrated Fast Recovery Diode | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: –100 V • rDS(ON) (max): 50 mΩ • ID: –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –100V • rDS (ON) (MAX) 50mΩ • ID –50A • Integrated Fast Recovery Diode | POWEREX | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. | MITSUBISHI 三菱电机 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS: –100 V • rDS(ON) (max): 50 mΩ • ID: –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –30V • rDS (ON) (MAX) 35mΩ • ID –50A • Integrated Fast Recovery Diode (TYP.) 55ns | MITSUBISHI 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –30V • rDS (ON) (MAX) 35mΩ • ID –50A • Integrated Fast Recovery Diode (TYP.) 55ns | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 35 mΩ • ID : – 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 35 mΩ • ID : – 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –60V • rDS (ON) (MAX) 18.9mΩ • ID –50A • Integrated Fast Recovery Diode | MITSUBISHI 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –60V • rDS (ON) (MAX) 18.9mΩ • ID –50A • Integrated Fast Recovery Diode | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns | RENESAS 瑞萨 | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 50 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –100V • rDS (ON) (MAX) 50mΩ • ID –50A • Integrated Fast Recovery Diode | MITSUBISHI 三菱电机 | | ||
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS –100V • rDS (ON) (MAX) 50mΩ • ID –50A • Integrated Fast Recovery Diode | POWEREX | | ||
High-Speed Switching Use Pch Power MOS FET Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 50 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. | RENESAS 瑞萨 | | ||
Tone Operated Bistable and Monostable Switches | CMLMICRO | | ||
High-Current Switching Applications | ONSEMI 安森美半导体 | | ||
QTC Tone Encoder | CMLMICRO | | ||
QTC TONE ENCODER 文件：205.99 Kbytes Page：4 Pages | CMLMICRO | | ||
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO | | ||
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO | | ||
SMALL PHYSICAL SIZE 文件：144.91 Kbytes Page：3 Pages | CMLMICRO | | ||
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO | | ||
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO | | ||
FUNCTIONAL SCHEMATIC 文件：232.63 Kbytes Page：6 Pages | CMLMICRO | | ||
FUNCTIONAL SCHEMATIC 文件：232.63 Kbytes Page：6 Pages | CMLMICRO | | ||
5-TONE SEQUENTIAL COODE 文件：686.32 Kbytes Page：12 Pages | CMLMICRO | | ||
5-TONE SEQUENTIAL COODE 文件：686.32 Kbytes Page：12 Pages | CMLMICRO | |
FX50产品属性
- 类型
描述
- 封装类型：
TO220FN
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
-30
- ID (A)：
-50
- RDS (ON)(mΩ) 最大值@10V或8V：
0.035
- Ciss (pF) 典型值：
4270
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
26+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
KEMET |
25+ |
N/A |
22360 |
样件支持,可原厂排单订货! |
|||
KEMET |
25+ |
N/A |
22412 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
FX50规格书下载地址
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DdatasheetPDF页码索引
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