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FX50价格
参考价格：￥0.0000
型号：FX500-LAC-GNJ-BB-JF 品牌：Vectron 备注：这里有FX50多少钱，2025年最近7天走势，今日出价，今日竞价，FX50批发/采购报价，FX50行情走势销售排行榜，FX50报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
High-Current Switching Applications Features •Compositetypewith2PNPtransistorscontainedinonepackage,facilitatinghigh-densitymounting. •TheFX501housestwochips,eachbeingequivalenttothe2SB1205,inonepackage. •Matchedpaircharacteristics. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  |   | |
High-Current Switching Applications High-CurrentSwitchingApplications Features •Compositetypewith2NPNtransistorscontainedinonepackage,facilitatinghigh-densitymounting. •TheFX502housestwochips,eachbeingequivalenttothe2SD1805,inonepackage. •Matchedpaircharacteristics. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-Current Switching Applications High-CurrentSwitchingApplications Features •Compositetypewith2PNPtransistorscontainedinonepackage,facilitatinghigh-densitymounting. •TheFX503housestwochips,eachbeingequivalenttothe2SB1202,inonepackage. •Matchedpaircharacteristics. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-Current Switching Applications High-CurrentSwitchingApplications Features •Compositetypewith2NPNtransistorscontainedinonepackage,facilitatinghigh-densitymounting. •TheFX504housestwochips,eachbeingequivalenttothe2SD1802,inonepackage. •Matchedpaircharacteristics. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-Current Switching Applications High-CurrentSwitchingApplications Features •Compositetypewith2PNPtransistorscontainedinonepackage,facilitatinghigh-densitymounting. •TheFX505housestwochips,eachbeingequivalenttothe2SB1203,inonepackage. •Matchedpaircharacteristics. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-Current Switching Applications High-CurrentSwitchingApplications Features •Compositetypewith2PNPtransistorscontainedinonepackage,facilitatinghigh-densitymounting. •TheFX506housestwochips,eachbeingequivalenttothe2SD1803,inonepackage. •Matchedpaircharacteristics. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-Current Switching Applications Features •Compositetypewith2PNPtransistorscontainedinonepackage,facilitatinghigh-densitymounting. •TheFX507housestwochips,eachbeingequivalenttothe2SC3647,inonepackage. •Matchedpaircharacteristics. Applications •LCDbaklightdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-Current Switching Applications Features •Compositetypewith2PNPtransistorscontainedinonepackage,facilitatinghigh-densitymounting. •TheFX508housestwochips,eachbeingequivalenttothe2SD1815,inonepackage. •Matchedpaircharacteristics. Applications •LCDbacklightdrive. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-Current Switching Applications Features •Compositetypewith2PNPtransistorscontainedinonepackage,facilitatinghigh-densitymounting. •TheFX509housestwochips,eachbeingequivalenttothe2SB1215,inonepackage. •Matchedpaircharacteristics. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–30V •rDS(ON)(MAX)................................................35mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiod | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–30V •rDS(ON)(MAX)................................................35mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiod | POWEREX Powerex Power Semiconductors |  | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–30V •rDS(ON)(max):35mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):55ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–30V •rDS(ON)(max):35mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):55ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–60V •rDS(ON)(MAX).............................................18.9mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiode | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–60V •rDS(ON)(MAX).............................................18.9mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiode | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–60V •rDS(ON)(max):18.9mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):70ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–60V •rDS(ON)(max):18.9mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):70ns •Viso:2000V Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE APPLICATION Motorcontrol,Lampcontrol,SolenoidcontrolDC-DCconverter,etc. | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–100V •rDS(ON)(max):50mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):100ns •Viso:2000V | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS.............................................................–100V •rDS(ON)(MAX)................................................50mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiode | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–100V •rDS(ON)(max):50mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):100ns •Viso:2000V | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE •4VDRIVE •VDSS...............................................................–30V •rDS(ON)(MAX)................................................35mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiode(TYP.)...........55ns | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE •4VDRIVE •VDSS...............................................................–30V •rDS(ON)(MAX)................................................35mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiode(TYP.)...........55ns | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–30V •rDS(ON)(max):35mΩ •ID:–50A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):55ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–30V •rDS(ON)(max):35mΩ •ID:–50A •RecoveryTimeoftheIntegratedFastRecoveryDiode(TYP.):55ns Applications Motorcontrol,lampcontrol,solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–60V •rDS(ON)(MAX).............................................18.9mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiode | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS...............................................................–60V •rDS(ON)(MAX).............................................18.9mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiode | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–60V •rDS(ON)(max):18.9mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):70ns | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–60V •rDS(ON)(max):18.9mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):70ns | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS.............................................................–100V •rDS(ON)(MAX)................................................50mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiode | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Pch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE •4VDRIVE •VDSS.............................................................–100V •rDS(ON)(MAX)................................................50mΩ •ID....................................................................–50A •IntegratedFastRecoveryDiode | POWEREX Powerex Power Semiconductors | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–100V •rDS(ON)(max):50mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):100ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
High-Speed Switching Use Pch Power MOS FET Features •Drivevoltage:4V •VDSS:–100V •rDS(ON)(max):50mΩ •ID:–50A •IntegratedFastRecoveryDiode(TYP.):100ns Applications Motorcontrol,Lampcontrol,Solenoidcontrol,DC-DCconverters,etc. | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
QTC TONE ENCODER 文件：205.99 Kbytes Page：4 Pages | CMLMICRO CML Microcircuits |  | | |
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO CML Microcircuits | | | |
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO CML Microcircuits | | | |
SMALL PHYSICAL SIZE 文件：144.91 Kbytes Page：3 Pages | CMLMICRO CML Microcircuits | | | |
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO CML Microcircuits | | | |
A 17-TONE GENERATOR 文件：400.05 Kbytes Page：6 Pages | CMLMICRO CML Microcircuits | | | |
FUNCTIONAL SCHEMATIC 文件：232.63 Kbytes Page：6 Pages | CMLMICRO CML Microcircuits | | | |
FUNCTIONAL SCHEMATIC 文件：232.63 Kbytes Page：6 Pages | CMLMICRO CML Microcircuits | | | |
5-TONE SEQUENTIAL COODE 文件：686.32 Kbytes Page：12 Pages | CMLMICRO CML Microcircuits | | | |
5-TONE SEQUENTIAL COODE 文件：686.32 Kbytes Page：12 Pages | CMLMICRO CML Microcircuits | | |
FX50产品属性
- 类型
描述
- 型号
FX50
- 制造商
EDSYN
- 功能描述
FUMINATOR Tip Extraction Unit for 50 Soldering Stations ** LIMITED TO STO
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SANYO |
2016+ |
XP6 |
4000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SANYO/三洋 |
22+ |
XP6 |
100000 |
代理渠道/只做原装/可含税 |
|||
SANYO/三洋 |
25+ |
XP6 |
1000 |
原装正品,假一罚十! |
|||
N/A |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
SANYO |
96+ |
6P |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SANYO |
23+ |
SOT89-6 |
50000 |
只做原装正品 |
|||
CML |
2022 |
AUCDIP |
1600 |
||||
SANYO/三洋 |
2450+ |
SOT89-6 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
FX50芯片相关品牌
FX50规格书下载地址
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