HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ............................................. 18.9mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ............................................. 18.9mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

Power MOSFETs

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 18.9 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 70 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ............................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ............................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 20mΩ ● ID ............................................................................

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 14 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.