HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 50mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................. –100V • rDS (ON) (MAX) ................................................ 50mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diode

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 50 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 50 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................48mΩ ● ID .............................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................48mΩ ● ID .............................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................48mΩ ● ID .............................................................................