Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diod

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 35 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 35mΩ • ID .................................................................... –50A • Integrated Fast Recovery Diod

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –30 V • rDS(ON) (max) : 35 mΩ • ID : –50 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 19mΩ ● ID ............................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 19mΩ ● ID ............................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 19mΩ ● ID ............................................................................

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.