| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applica | Fuji 富士通 |   | ||
Power filed Effect Transistor FEATURES ◆ Robust High Voltage Termination ◆ Avalanche Energy Specified ◆ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ◆ Diode is Characterized for Use in Bridge Circuits ◆ IDSS and VDS(on) Specified at Elevated Temperature | JIANGSU 长电科技 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.92413 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
IGBT with integrated diode in packages offering space saving advantage 文件：1.74081 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
POWER FIELD EFFECT TRANSISTOR 文件：191.5 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINE |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
INFINEON |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
24+ |
TO-252 |
210 |
||||
INFINEON/英飞凌 |
23+ |
TO-220F |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
INFINEON/英飞凌 |
22+ |
TO220F |
12245 |
现货,原厂原装假一罚十! |
|||
INF进口原 |
17+ |
220-220F |
6200 |
||||
INFINEON/英飞凌 |
24+ |
NA/ |
900 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
135 |
全新原装正品支持含税 |
|||
INF |
20+ |
220-220F |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEO |
24+ |
TO-220F |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
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深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-5-25
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