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HIGH-SPEED SWITCHING USE

● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 38mΩ ● ID ........................................................................................ 30A ● Integr

MITSUBISHI

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 38mΩ ● ID ........................................................................................ 30A ● Integr

POWEREX

MITSUBISHI Nch POWER MOSFET

● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 38mΩ ● ID ........................................................................................ 30A ● Integr

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HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 30mΩ ● ID ............................................................................

MITSUBISHI

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 30mΩ ● ID ............................................................................

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 30mΩ ● ID ............................................................................

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High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =22mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

RENESAS

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HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................84mΩ ● ID .............................................................................

MITSUBISHI

三菱电机

High-Speed Switching Use Nch Power MOS FET

High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS: 100 V • rDS(ON) (max): 84 mΩ • ID: 30 A • Integrated Fast Recovery Diode (TYP.) : 80 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESAS

瑞萨

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................100V ● rDS (ON) (MAX) ..............................................................84mΩ ● ID .............................................................................

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =84mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

High-Speed Switching Use Nch Power MOS FET

High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS: 100 V • rDS(ON) (max): 84 mΩ • ID: 30 A • Integrated Fast Recovery Diode (TYP.) : 80 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESAS

瑞萨

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................150V ● rDS (ON) (MAX) ..............................................................86mΩ ● ID .............................................................................

POWEREX

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................150V ● rDS (ON) (MAX) ..............................................................86mΩ ● ID .............................................................................

MITSUBISHI

三菱电机

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 150 V • rDS(ON) (max) : 86 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESAS

瑞萨

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 150 V • rDS(ON) (max) : 86 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:324.2 Kbytes Page:2 Pages

ISC

无锡固电

HIGH-SPEED SWITCHING USE

文件:102.69 Kbytes Page:7 Pages

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瑞萨

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

MITSUBISHI

三菱电机

HIGH-SPEED SWITCHING USE

文件:102.97 Kbytes Page:7 Pages

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Power MOSFETs

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Power MOSFETs

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FS30KMJ产品属性

  • 类型

    描述

  • 封装类型:

    TO220FN

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • VDSS (V) 最大值:

    60

  • ID (A):

    30

  • RDS (ON)(mΩ) 最大值@10V或8V:

    0.022

  • Ciss (pF) 典型值:

    2600

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

更新时间:2026-5-17 16:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi
25+
TO220F
10065
原装正品,有挂有货,假一赔十
Renesas
17+
TO-220F
6200
Renesas
26+
TO-220
86720
全新原装正品价格最实惠 假一赔百
RENESAS
18+
TO-220F
85600
保证进口原装可开17%增值税发票
MIT
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
MITSUBISHI/三菱
23+
TO-220
5200
原厂原装
ETRONTECH
24+
TSSOP
10000
原装正品 清库存低价出
VBsemi
21+
TO220F
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
24+
TO-220F
16900
原装正品现货支持实单
M
22+
TO-220FN
6000
十年配单,只做原装

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