HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 100V ● rDS (ON) (MAX) 84mΩ ● ID

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 100V ● rDS (ON) (MAX) 84mΩ ● ID

High-Speed Switching Use Nch Power MOS FET

High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS: 100 V • rDS(ON) (max): 84 mΩ • ID: 30 A • Integrated Fast Recovery Diode (TYP.) : 80 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =84mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs

High-Speed Switching Use Nch Power MOS FET

High-Speed Switching Use Nch Power MOS FET Features • Drive voltage : 4 V • VDSS: 100 V • rDS(ON) (max): 84 mΩ • ID: 30 A • Integrated Fast Recovery Diode (TYP.) : 80 ns • Viso : 2000 V Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : –100 V • rDS(ON) (max) : 0.143 Ω • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns • Viso : 2000 V

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS –100V • rDS (ON) (MAX) 0.143Ω • ID –30A • Integrated Fast Recovery Diode (TYP.) 1

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS –100V • rDS (ON) (MAX) 0.143Ω • ID –30A • Integrated Fast Recovery Diode (TYP.) 1