HIGH-SPEED SWITCHING USE

● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 38mΩ ● ID ........................................................................................ 30A ● Integr

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 38mΩ ● ID ........................................................................................ 30A ● Integr

MITSUBISHI Nch POWER MOSFET

● 4V DRIVE ● VDSS ................................................................................. 30V ● rDS (ON) (MAX) ............................................................. 38mΩ ● ID ........................................................................................ 30A ● Integr

isc N-Channel MOSFET Transistor

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HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE

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High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 30 V • rDS(ON) (max) : 61 mΩ • ID : – 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –30V • rDS (ON) (MAX) ................................................ 61mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........