MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 30mΩ ● ID ............................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 30mΩ ● ID ............................................................................

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS ................................................................................. 60V ● rDS (ON) (MAX) ............................................................. 30mΩ ● ID ............................................................................

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =22mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 60 V • rDS(ON) (max) : 22 mΩ • ID : 30 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

HIGH-SPEED SWITCHING USE

文件：102.97 Kbytes Page：7 Pages

Power MOSFETs

HIGH-SPEED SWITCHING USE

• 4V DRIVE • VDSS ............................................................... –60V • rDS (ON) (MAX) ................................................ 54mΩ • ID .................................................................... –30A • Integrated Fast Recovery Diode (TYP.) .........

High-Speed Switching Use

Features • Drive voltage : 4 V • VDSS : –60 V • rDS(ON) (max) : 54 mΩ • ID : –30 A • Integrated Fast Recovery Diode (TYP.) : 55 ns • Viso : 2000 V