60V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=16.8A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.063Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=17.2A@ TC=25℃ ·Drain Source Voltage -VDSS=60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.06Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

60V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

60V N-Channel MOSFET

文件：750.92 Kbytes Page：9 Pages

N-Channel QFET MOSFET 60 V, 17.2 A, 42 m

文件：1.29825 Mbytes Page：8 Pages

N-Channel QFET짰 MOSFET 60 V, 17.2 A, 42 m廓

文件：1.29825 Mbytes Page：8 Pages

功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，17.2 A，42 mΩ，IPAK

60V LOGIC N-Channel MOSFET

文件：860.93 Kbytes Page：9 Pages

100 Avalanche Tested

文件：892.59 Kbytes Page：8 Pages

MOSFET N-CH 60V 16.8A IPAK

60V N-Channel Enhancement Mode Power MOSFET

Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired

60V N-Channel Enhancement Mode Power MOSFET

General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology

20A mps,60 Volts N-CHANNEL MOSFET

文件：193.72 Kbytes Page：2 Pages

Fast Switching

文件：67.37 Kbytes Page：2 Pages

N-Channel 60-V (D-S) MOSFET

文件：897.38 Kbytes Page：6 Pages