位置：首页 > IC中文资料第336页 > FQU20N06TU
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQU20N06TU | MOSFET N-CH 60V 16.8A IPAK | ONSEMI 安森美半导体 |   | |
60V N-Channel Enhancement Mode Power MOSFET Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired | UMW 友台半导体 | | ||
60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology | EVVOSEMI 翊欧 | | ||
N-Channel 60-V (D-S) MOSFET 文件：897.38 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
Fast Switching 文件：67.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
20A mps,60 Volts N-CHANNEL MOSFET 文件：193.72 Kbytes Page：2 Pages | CHONGQING 平伟实业 | |
FQU20N06TU产品属性
- 类型
描述
- 型号
FQU20N06TU
- 功能描述
MOSFET 60V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild/ON |
22+ |
TO2513 Short Leads IPak TO251A |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
23+ |
TO-251 |
980000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILD/仙童 |
23+ |
I-PAKTO-251 |
24190 |
原装正品代理渠道价格优势 |
|||
onsemi(安森美) |
24+ |
IPAK |
11346 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FAIRCHILD |
2023+ |
TO-251 |
50000 |
原装现货 |
|||
Fairchild/ON |
23+ |
TO2513 Short Leads IPak TO251A |
8000 |
只做原装现货 |
|||
Fairchild/ON |
23+ |
TO2513 Short Leads IPak TO251A |
7000 |
||||
FAIRCHIL |
24+ |
TO-251 |
8866 |
||||
FAIRCHILD |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD |
12+ |
TO-251 |
1204 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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2021-1-14
DdatasheetPDF页码索引
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